jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 6 - http://www.jjwdz.com j ct 1025/ 12 2 5 series 2 5 a scr s rev. 2 .0 description: jct1025/1225 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. they are especially recommended f or use on solid state relay, motorcycle, power charger, t - tools etc. main features symbol value unit i t( rms ) 25 a i gt 40 ma v tm 1. 6 v absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage (t j =25 ) v drm 1000/ 12 00 v repetitive peak reverse voltage (t j =25 ) v rrm 1000/ 12 00 v non repetitive surge peak off - state voltage v dsm v drm +100 v non repetitive peak reverse voltage v rsm v r rm +100 v rms on - state current to - 220a / to - 220 f ( t c = 8 5 ) i t( rms ) 25 a to - 220b/ to - 220 c (t c =1 0 0 ) non repetitive surge peak on - state current (tp= 1 0 ms) i tsm 300 a i 2 t value for fusing (tp= 10 m s ) i 2 t 450 a 2 s critical rate of rise of on - state current ( i g =2 i gt ) di/dt 50 a / s peak gate current i gm 4 a a(2) k(1) g(3) 1 2 3 to-220a 1 2 3 to-220b to-220f 1 2 3 1 2 3 to-220c
j ct 1025 / 12 2 5 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 6 - http://www.jjwdz.com average gate power dissipation p g(av) 1 w peak gate power p gm 5 w electrical characteristics (t j =25 unless otherwise specified ) symbol test condition value unit min. typ. max. i gt v d =12v r l =33 - - 40 ma v gt - - 1. 3 v v gd v d =v drm t j =125 r l =3.3k 0.2 - - v i l i g = 1.2 i g t - - 90 ma i h i t = 500m a - - 5 0 ma dv/dt v d =2/3v drm gate ope n t j = 125 1000 - - v / s static characteristics symbol parameter value(max) unit v tm i t m = 5 0 a tp= 380 s t j =25 1. 6 v i drm v d =v d rm v r =v r rm t j =25 10 a i rrm t j =1 25 4 ma thermal resistances symbol parameter value unit r th(j - c) junction to case(ac) to - 220a / to - 220 f 1.9 /w to - 220b / to - 220 c 1.0
j ct 1025 / 12 2 5 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 6 - http://www.jjwdz.com ordering information package mechanical data j c t 1 2 2 5 b j i e j i e m i c r o e l e c t r o n i c s c o . , l t d s c r s 1 0 : v d r m / v r r m 1 0 0 0 v 1 2 : v d r m / v r r m 1 2 0 0 v i t ( r m s ) : 2 5 a a : t o - 2 2 0 a b : t o - 2 2 0 b c : t o - 2 2 0 c f : t o - 2 2 0 f a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.386 0.409 6.55 6.95 0.258 0.274 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220a
j ct 1025 / 12 2 5 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 6 - http://www.jjwdz.com package mechanical data jie a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220b c2 c3 c g l2 a e h b d f l1 l3 dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.70 0.45 1.23 4.60 0.90 0.60 1.32 0.173 0.028 0.018 0.048 0.181 0.035 0.024 0.052 2.20 2.60 9.90 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.087 0.102 8.90 9.90 2.54 0.1 0.350 0.390 10.3 0.390 0.406 6.30 6.90 0.248 0.272 2.65 2.95 0.104 0.116 3.6 0.142 3.39 0.133 to-220c max 3.6mm
j ct 1025 / 12 2 5 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 5 / 6 - http://www.jjwdz.com package mechanical data a d e h g b c c2 max 3.5mm c3 v1 l3 l2 f l1 dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.74 0.48 2.40 4.80 0.83 0.75 2.70 0.173 0.029 0.019 0.094 0.189 0.033 0.030 0.106 2.60 3.00 9.70 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 v1 0.346 0.366 10.3 0.382 0.406 6.40 7.00 0.252 0.276 3.30 0.130 45 3.63 0.143 0.80 0.031 45 to-220f fig.3: surge peak on-state current versus number of cycles fig.1 maximum power dissipation versus rms on-state current fig.4: on-state characteristics (maximum values) fig.2: rms on-state current versus case temperature i t(rms) (a) p(w) 0 5 10 15 20 25 0 i t(rms) (a) tc ( ) 0 0 25 50 75 100 125 1 10 100 1000 number of cycles 0 50 i tsm (a) i tm (a) v tm (v) 0 1 2 3 4 5 1 10 20 25 30 100 150 200 6 12 24 30 36 5 10 to-220a/ to-220f to-220b/ to-220c 250 300 350 100 18 15 300 tj=25 tj=125 =180 one cycle tp=10ms
j ct 1025 / 12 2 5 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 6 / 6 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of pate nts. jiangsu jiejie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the second version which is made in 20 - nov. - 2014. this document supersedes and replaces all information previously supplied. is a registered trademark of jiangsu jiejie microelectronics co.,ltd. copyright ? 201 4 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.6: relative variations of gate trigger current, holding current and latching current versus junction temperature fig.5: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of i t (di/dt < 50a/ s) tp(ms) 0.01 0.1 1 10 10 i tsm (a), i t (a s) -40 -20 0 20 40 60 80 100 120 140 i gt ,i h ,i l (tj)/i gt ,i h ,i l (tj=25 ) 0.0 0.5 1.5 2.0 3.0 2 2 2 1.0 2.5 tj( ) i gt 1000 100 3000 i h &i l di/dt i t 2 i tsm
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